发明名称 |
Feedback biasing integrated circuit |
摘要 |
A fast-sensing amplifier for a flash memory comprised of a plurality of floating-gate memory devices and having a column line selectively coupled to the devices is disclosed. The column line is quickly discharged to ground before a read-biasing and amplifying circuit quickly pulls up the line to the read-bias potential at a particular memory device. This potential is compared to a sense-reference potential by a differential amplifier within the fast-sensing amplifier. The binary state of the particular memory device is provided as the output of the fast-sensing amplifier.
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申请公布号 |
US6744673(B2) |
申请公布日期 |
2004.06.01 |
申请号 |
US20030352431 |
申请日期 |
2003.01.28 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BRINER MICHAEL S. |
分类号 |
G11C7/02;G11C7/06;G11C11/34;G11C16/24;G11C16/26;G11C16/28;(IPC1-7):G11C11/34 |
主分类号 |
G11C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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