发明名称 Active matrix display device
摘要 An active matrix display device is provided a display area including a set of pixel regions each having a first thin-film transistor, and a driving circuit forming area located outside the display area and having second thin-film transistors. A gate electrode of the first thin-film transistor is made of a material different than a gate signal line and has a portion that is directly laid on or under the gate signal line to establish electrical connection. A gate electrode of each of the second thin-film transistors is made of a material different than a wiring layer or electrode to be connected to it and has a portion that is directly laid on or under the wiring layer or electrode to establish electrical connection. The gate electrode of the first thin-film transistor is made of the same material as that of each of the second thin-film transistors. The gate signal line is made of the same material as the wiring layer or electrode.
申请公布号 US6744479(B2) 申请公布日期 2004.06.01
申请号 US20010919916 申请日期 2001.08.02
申请人 HITACHI, LTD. 发明人 HASEGAWA ATSUSHI
分类号 G02F1/133;G02F1/1362;G02F1/1368;(IPC1-7):G02F1/136;G02F1/134 主分类号 G02F1/133
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