发明名称 |
Thermal annealing process for producing low defect density single crystal silicon |
摘要 |
A thermal annealing process for producing a low defect density single crystal silicon wafer. The process includes thermally annealing a wafer having a first axially symmetric region which extends radially inwardly from the circumferential edge, contains silicon self-interstitials as the predominant intrinsic point defect and is substantially free of agglomerated interstitial defects and a second axially symmetric region which has vacancies as the predominant intrinsic point defect. The wafer is subjected to a thermal anneal at a temperature in excess of about 1000° C. in an atmosphere of hydrogen, argon or a mixture thereof to dissolve agglomerated vacancy defects present in the second axially symmetric region within a layer extending from the front side toward the central plane.
|
申请公布号 |
US6743289(B2) |
申请公布日期 |
2004.06.01 |
申请号 |
US20020073506 |
申请日期 |
2002.02.11 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
FALSTER ROBERT J.;BINNS MARTIN JEFFREY;WANG ALAN |
分类号 |
C30B33/02;C30B15/00;C30B33/00;H01L21/322;H01L21/324;(IPC1-7):C30B31/00 |
主分类号 |
C30B33/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|