| 摘要 |
A three-terminal semiconductor transistor device comprises a semiconductor base region in contact with a first electric terminal, a conductive emitter region in contact with the semiconductor base region, forming a first Schottky barrier junction at the interface of the conductive emitter region and the semiconductor base region. The conductive emitter region is in contact with a second electric terminal. The three-terminal semiconductor transistor device further includes a conductive collector region in contact with the semiconductor base region, forming a second Schottky barrier junction at the interface of the conductive collector region and the semiconductor base region. The conductive collector region is in contact with a third electric terminal. The tunneling currents through the first and the second Schottky barrier junctions are substantially controlled by the voltage of the semiconductor base region.
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