发明名称 |
Semiconductor memory device with mode register and method for controlling deep power down mode therein |
摘要 |
Disclosed are a semiconductor memory device with a mode register that prevents the semiconductor device from undesirably entering into a deep power down mode during the beginning of a power up and a method for controlling a deep power down mode therein. An internal power supply voltage generator generates an internal power supply voltage of the semiconductor memory device. A clock buffer buffers external clock and clock enable signals to generate internal clock and clock enable signals. A command decoder generates an intermediate deep power down mode entry signal or a mode register setting signal. A mode register setting latch circuit latches the mode register setting signal from the command decoder. A deep power down mode controller generates a final deep power down mode entry signal. A semiconductor memory device is accordingly prevented from undesirably entering into a deep power down mode during beginning of a power up.
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申请公布号 |
US6744687(B2) |
申请公布日期 |
2004.06.01 |
申请号 |
US20020331378 |
申请日期 |
2002.12.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KOO KIE BONG;HUR YOUNG DO |
分类号 |
G11C7/00;G11C5/14;G11C7/20;G11C11/4072;G11C11/4074;(IPC1-7):G11C7/00;G11C8/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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