发明名称 |
Method of reducing leakage using Si3N4 or SiON block dielectric films |
摘要 |
A dielectric film block is used in semiconductor processing to protect selected areas of the wafer from silicidation. The selected areas may include resistors. A first layer of oxide is formed on the resistor and a second layer comprising SiON or Si3N4 is disposed on the oxide. A mask is patterned to allow etching to take place in the areas where silicide formation is desired. The oxide layer serves as an etch stop layer during etching of the second layer.
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申请公布号 |
US6743669(B1) |
申请公布日期 |
2004.06.01 |
申请号 |
US20020164227 |
申请日期 |
2002.06.05 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
LIN HONG;GU SHIQUN;MCGRATH PETER |
分类号 |
H01L21/314;H01L21/318;H01L21/8234;H01L27/06;(IPC1-7):H01L21/823;H01L21/824 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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