| 摘要 |
An indium tin oxide (ITO) film is formed at room temperature in a moistened (water added) atmosphere, and the formed film is thermally treated at 180° C. or more for about one hour or longer. The water added atmosphere is determined to have a total partial pressure of water of about 8.2x10<-3 >pascals or less in a film forming chamber, so that an effect of improving film quality by annealing in a later step can be produced. When a total partial pressure of water in the film forming chamber is set to 3.20x10<-3 >pascals or more, an amorphous ITO film can be formed, and an etching treatment can be performed quickly after forming the film. A heat treatment after forming the film (patterning) is appropriately performed under conditions of a temperature of about 180° C. or more (e.g., about 220° C.) for one hour or more (e.g., about one hour to about three hours). Thus, the film is polycrystallized, and an ITO film having low resistance and high transmittance can be produced.
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