| 发明名称 |
Thin silicon circuits and method for making the same |
| 摘要 |
A method of coupling a single crystal semiconductor layer to a support substrate. Thinning the single crystal layer. Introducing an integrated circuit into the single crystal layer. And removing the thinned single crystal layer with the integrated circuit from the support substrate.
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| 申请公布号 |
US6743697(B2) |
申请公布日期 |
2004.06.01 |
| 申请号 |
US20000751626 |
申请日期 |
2000.12.27 |
| 申请人 |
INTEL CORPORATION |
发明人 |
RAVI KRAMADHATI V. |
| 分类号 |
H01L21/301;H01L21/304;(IPC1-7):H01L21/30;H01L21/46 |
主分类号 |
H01L21/301 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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