发明名称 |
Method of etching high aspect ratio openings |
摘要 |
A method of etching a deep, high aspect ratio opening in a silicon substrate includes etching the substrate with a first plasma formed using a first gaseous mixture including a bromine containing gas, an oxygen containing gas and a first fluorine containing gas. The etching process with the first gaseous mixture produces a sidewall passivating deposit, which builds up near the opening entrance. To reduce this buildup, and to increase the average etching rate, the sidewall passivating deposit is periodically thinned by forming a second plasma using a mixture containing silane and a second fluorine containing gas. The substrate remains in the same plasma reactor chamber during the entire process and the plasma is continuously maintained during the thinning step. Holes of a depth greater than 40 times the width may be produced using repeated cycles of etching and thinning.
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申请公布号 |
US6743727(B2) |
申请公布日期 |
2004.06.01 |
申请号 |
US20010874109 |
申请日期 |
2001.06.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MATHAD GANGADHARA S.;PANDA SIDDHARTHA;RANADE RAJIV M. |
分类号 |
B44C1/22;C03C25/68;C23F1/00;H01L21/00;H01L21/302;H01L21/3065;H01L21/308;H01L21/762;(IPC1-7):H01L21/00 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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