METHOD FOR PRODUCING SILICON SINGLE CRYSTAL DOPED WITH HIGHLY VOLATILE FOREIGN SUBSTANCE, THIS KIND OF SINGLE CRYSTAL, AND SEMICONDUCTOR WAFER MANUFACTURED FROM THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method with which simple estimation of the required dopant quantity is made possible under predetermined processing conditions without preliminarily analyzing the treatment conditions in detail. SOLUTION: The method for producing a silicon single crystal which is doped with a highly volatile foreign substance comprises pulling the single crystal from a melt which is held under predetermined process conditions in a crucible. A quantity Noof the foreign substance is added into the melt in order to achieve a desired resistance of the melt, and after a time t, the melt is after-doped at least once with a quantityΔN(t) of the foreign substance, in order to compensate for the loss caused by the foreign substance evaporating out of the melt. COPYRIGHT: (C)2004,JPO