| 摘要 |
PROBLEM TO BE SOLVED: To provide a laminated SOI substrate and a method for manufacturing it for preventing the generation of the deterioration of the electric characteristics of a device due to the effect of boron contamination when injecting ions, and for preventing the occurrence of dislocation in the n<SP>+</SP>layer of an SOI layer, and for reducing the manufacturing costs. SOLUTION: Arsenic and antimony are ion-injected to the laminated side face of a wafer 10 for an active layer, and then the ion injection face is etched by 5 to 20 nm. Therefore, it is possible to remove 11 boron from the ion injection face prior to the lamination with a wafer 20 for a supporting substrate. As a result, it is possible to form an n/n<SP>+</SP>/SiO<SB>2</SB>structure as designed in an SOI layer 10A. COPYRIGHT: (C)2004,JPO
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