| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which the damages given to crystals when the crystals are irradiated with a laser beam are reduced. SOLUTION: The surface layer section of a semiconductor substrate is made into an amorphous form by implanting ions into the section. Then, an impurity is injected into the area made into the amorphous form. In addition, the injected impurity is activated by making a pulsed laser beam incident to the surface of the semiconductor substrate under a condition where the surface temperature of the substrate does not exceed the melting point of the amorphous semiconductor constituting the surface layer section of the substrate. COPYRIGHT: (C)2004,JPO
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