| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor (called TFT, hereinafter) that can improve the reliability by controlling a local temperature rise due to self-heating, without increasing the number of manufacturing steps, and a liquid crystal display using it for a drive circuit and the like, provided with an active matrix substrate. <P>SOLUTION: This deals with the TFT that has a channel area 5 set face to face with a gate electrode 4 with a gate insulating film in between and a heavily-doped source/drain region 8 formed in a self-aligned way and connecting to the channel region. The gate electrode has a structure that has a swollen part 44 swelling at its central part in a channel-crosswise direction, while curving in a channel-lengthwise direction. Since a local temperature rise due to the self-heating can be controlled, reliability of the TFT can be enhanced. <P>COPYRIGHT: (C)2004,JPO</p> |
