发明名称 |
Reliable high voltage gate dielectric layers using a dual nitridation process |
摘要 |
Dual gate dielectric layers are formed on a semiconductor substrate for MOS transistor fabrication. A first dielectric layer (30) is formed on a semiconductor substrate (10). A first plasma nitridation process is performed on said first dielectric layer. The first dielectric layer (30) is removed in regions of the substrate and a second dielectric layer (50) is formed in these regions. A second plasma nitridation process is performed on the first dielectric layer and the second dielectric layer. MOS transistors (160, 170) are then fabricated using the dielectric layers (30, 50).
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申请公布号 |
US2004102010(A1) |
申请公布日期 |
2004.05.27 |
申请号 |
US20030702234 |
申请日期 |
2003.11.06 |
申请人 |
KHAMANKAR RAJESH;GRIDER DOUGLAS T.;NIIMI HIROAKI;GURBA APRIL;TRAN TOAN;CHAMBERS JAMES J. |
发明人 |
KHAMANKAR RAJESH;GRIDER DOUGLAS T.;NIIMI HIROAKI;GURBA APRIL;TRAN TOAN;CHAMBERS JAMES J. |
分类号 |
H01L21/28;H01L21/314;H01L21/8234;H01L27/088;H01L29/51;(IPC1-7):H01L21/320;H01L21/336;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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地址 |
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