| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element which uniformly increases the grain diameter of polycrystalline silicon. SOLUTION: A method for manufacturing a semiconductor element includes a process of forming a semiconductor material layer on a substrate, a process of heating and melting the semiconductor material by applying laser beams to at least one region of the semiconductor material layer, and a process of uniformly cooling the semiconductor material after laser irradiation. A polycrystal fine structure is formed into the semiconductor material layer by solidifying in the transverse direction from the boundary of region irradiated with laser. Further, the method preferably contains a process of heating the semiconductor materials at a temperature between≥300°C and lower than the crystallization temperature of the semiconductor. COPYRIGHT: (C)2004,JPO
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