| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for reducing the micro roughness on the surface of a silicon substrate. SOLUTION: A manufacturing method of a semiconductor device has a process (a) for preparing a silicon substrate provided with a crystal face having high symmetry or a surface following vicinity of it, a hydrogen annealing process (b) for annealing the silicon substrate in an atmosphere containing hydrogen and removing a natural oxide film, an inert gas annealing process (c) for annealing the silicon substrate in an inert gas atmosphere after the process (b) and generating migration of a silicon atom, and a process (d) for forming a gate insulating film on a surface of the silicon substrate after the process (c). COPYRIGHT: (C)2004,JPO
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