| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a stacked semiconductor device in which an extreme voltage drop or heat generation, a delay, or a loss due to the resistance of an electrode, and variations of the resistance of the electrode can be prevented conveniently. <P>SOLUTION: The semiconductor device 10 has a large number of through electrodes 8 of identical cross-sectional area penetrating the surface and rear surface of a semiconductor chip 1. A plurality of through electrodes 8 are used for an identical signal depending on the magnitude of the current level. Since the cross-sectional area of the through electrode can be increased relatively, the resistance of the through electrode can be decreased and heat generation, a delay, and the like, can be reduced. <P>COPYRIGHT: (C)2004,JPO |
