| 摘要 |
In a magnetic random access memory, a memory cell includes a magnetic field generating section having an extension wiring line, and connected with a first selected bit line, a conductive pattern, and a magnetic resistance element having a spontaneous magnetization, storing a data and connected between the extension wiring line and the conductive pattern. In a data write operation into the memory cell, a write data is written in the magnetic resistance element of the memory cell by a write electric current which flows through the extension wiring line of the magnetic field generating section of the memory cell, and a value of the write data is determined based on a direction of the write electric current. In a data read operation from the memory cell, a read electric current flows through the extension wiring line of the magnetic field generating section and the magnetic resistance element in the memory cell. A memory cell array section includes the memory cells arranged in a matrix, and each memory cell is connected with a first word line and a first bit line at least. the gate section.
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