| 发明名称 |
Method for fabricating a sige film, substrate for epitaxial growth and multilayered structure |
| 摘要 |
On a Si substrate are formed successively a Ge interfacial layer as a dislocation controlling layer and a SiGe film. Then, at least at the region of the SiGe film near the Si substrate are formed 90 degrees dislocations.
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| 申请公布号 |
EP1422745(A2) |
申请公布日期 |
2004.05.26 |
| 申请号 |
EP20030257257 |
申请日期 |
2003.11.18 |
| 申请人 |
NAGOYA UNIVERSITY |
发明人 |
SAKAI, AKIRA;NAKATUSKA, OSAMU;ZAIMA, SHIGEAKI;YASUDA, YUKIO |
| 分类号 |
H01L21/205;H01L21/20;H01L21/203;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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