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发明名称
Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layer
摘要
申请公布号
AU2003299550(A8)
申请公布日期
2004.05.25
申请号
AU20030299550
申请日期
2003.10.14
申请人
ADVANCED MICRO DEVICES, INC.
发明人
DERICK J. WRISTERS;QI XIANG;JAMES F. BULLER
分类号
H01L21/336;H01L29/786;(IPC1-7):H01L21/762;H01L21/20
主分类号
H01L21/336
代理机构
代理人
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