| 摘要 |
An integrated dynamic memory has word lines and bit lines as well as at least one global bit line, which is disposed in the memory cell array in the same sense as the bit lines. A voltage amplifier is connected to one of the bit lines for amplification of a data signal to a first voltage level which is not sufficient for writing the data signal back to the selected memory cell, and for outputting the amplified data signal to the global bit line. The global bit line is connected to a read amplifier for amplification of the data signal to a second voltage level that, in contrast, is sufficient for writing back the data signal. The hierarchical amplification concept allows rapid and reliable amplification of data signals that are to be read out, even if the integration density of the memory cells is high.
|
