发明名称 |
Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same |
摘要 |
The present invention discloses a novel insulating layer for use in semiconductor devices, the insulating layer having a multi-layer nanolaminate structure consisting of alternating boron nitride thin films and silicon nitride thin films, each of a controlled, desired thickness, together with methods for forming the same.The insulating layer of the present invention has a multi-layer nanolaminate structure consisting of alternating boron nitride thin films and silicon nitride thin filmsformed by the steps of: (a) depositing a silicon nitride thin film on a wafer, (b) depositing a boron nitride thin film on the silicon nitride thin film, and (c) forming the multi-layer nanolaminate thin film by alternately repeating steps (a) and (b). |
申请公布号 |
US6740977(B2) |
申请公布日期 |
2004.05.25 |
申请号 |
US20030422283 |
申请日期 |
2003.04.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN JAE-YOUNG;HYUNG YONG-WOO;KIM YOUNG-SEOK;KANG MAN-SUG |
分类号 |
C23C16/34;C23C16/44;C23C16/452;C23C16/455;H01L21/28;H01L21/318;H01L21/321;H01L21/768;H01L23/31;H01L23/532;H01L29/51;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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