发明名称 |
Sputtering method for forming film and apparatus therefor |
摘要 |
Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.
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申请公布号 |
US6740210(B2) |
申请公布日期 |
2004.05.25 |
申请号 |
US20010973713 |
申请日期 |
2001.10.11 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
ECHIZEN HIROSHI;YAMASHITA TOSHIHIRO |
分类号 |
C23C14/34;C23C14/00;C23C14/08;C23C14/54;C23C14/56;H01B13/00;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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