发明名称 Sputtering method for forming film and apparatus therefor
摘要 Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.
申请公布号 US6740210(B2) 申请公布日期 2004.05.25
申请号 US20010973713 申请日期 2001.10.11
申请人 CANON KABUSHIKI KAISHA 发明人 ECHIZEN HIROSHI;YAMASHITA TOSHIHIRO
分类号 C23C14/34;C23C14/00;C23C14/08;C23C14/54;C23C14/56;H01B13/00;(IPC1-7):C23C14/34 主分类号 C23C14/34
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