PATTERN MASK FOR LASER CRYSTALLIZATION EQUIPMENT

摘要

PURPOSE: A pattern mask for laser crystallization equipment is provided to improve crystallization characteristics by precisely aligning the crystallization direction of a pattern mask and a substrate, and to improve productivity by using a plurality of patterns only by an alignment process. CONSTITUTION: A laser beam is selectively projected by the pattern mask(6) to perform crystallization of a predetermined shape and direction on a substrate. Horizontal vernier key patterns(6a) are formed in the confronting right-and-left positions of the pattern mask with respect to a center point.