| 摘要 |
<p>The present invention is a method and apparatus to program and/or to test a non-volatile memory cell to be programmed into a plurality of bit states (with each bit state having two states). More particularly, the method rapidly programs or tests such a cell by hard programming the cell when the cell is to be programmed into a state which permits the minimal amount of current to flow in the channel. The charge pump integral with the memory device is capable of generating two types of pulses: a small incremental pulse, and a "hard" pulse, which is used only if the cell is to be programmed into the fully programmed state. For the states between fully programmed and fully erased, the incremental pulse is used to incrementally program the cell.</p> |
