PREPARATION METHOD FOR SEMICONDUCTOR NANO RING

摘要

The invention discloses a preparation method for a semiconductor nano ring. In the method, first a positive photoresist is coated on a semiconductor substrate, then, based on the principle of Poisson diffraction, the photoresist is exposed by means of a circular mask having a micron-grade diameter to obtain ring shaped photoresist and then plasma etching is carried out on the substrate under the protection of the ring-shaped photoresist to form a ring-shaped structure with nano-sized wall thickness on the surface of the substrate. The nano-sized ring shaped structure is prepared by using micron-sized photoetching equipment and the micron-sized circular mask, so dependence on advanced photoetching technology is overcome, thus effectively lowering the preparation cost of the nano-sized ring shaped structure.