| 发明名称 |
USING ISOLATED P-WELL TRANSISTOR ARRANGEMENTS TO AVOID LEAKAGE CAUSED BY WORD LINE/BIT LINE SHORTS |
| 摘要 |
The present invention avoids leakage in semiconductors, such as dynamic random access memory (DRAM) devices, caused by word line/bit line shorts by locating transistors (e.g., isolator, current limiter, equalize) inside isolated p-wells. |
| 申请公布号 |
WO2004042736(A2) |
申请公布日期 |
2004.05.21 |
| 申请号 |
WO2003EP12100 |
申请日期 |
2003.10.30 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
MENKE, MANFRED;TERLETZKI, HARTMUD |
| 分类号 |
H01L21/761;H01L21/8242;H01L27/02;H01L27/088;H01L27/108 |
主分类号 |
H01L21/761 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
