| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a capacitive element with which strontium titanate having a high specific dielectric constant can be formed on a polycrystalline lower electrode and oxidation of a barrier metal film is suppressed. <P>SOLUTION: The amorphous strontium titanate film 15a is deposited on the lower electrode 14 formed of polycrystalline Ru (ruthenium). The strontium titanate film 15a is crystallized in atmosphere of inert gas by RTA heat treatment at a temperature of 500°C to 650°C. <P>COPYRIGHT: (C)2004,JPO |
