NITRIDE SEMICONDUCTOR LASER DEVICE, ITS MANUFACTURING METHOD AND SEMICONDUCTOR OPTICAL DEVICE HAVING SAME

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device having a long laser oscillation lifetime. SOLUTION: The semiconductor laser device includes a nitride semiconductor substrate and a nitride semiconductor layer laminated on the substrate. The substrate has a dot-like dislocation concentrated region and a low dislocation region of a region except the dislocation concentrated region. The nitride semiconductor layer has a stripe-state laser optical waveguide region. The laser optical waveguide region is provided on the low dislocation region, and is in parallel with or perpendicular to a plurality of periodically aligned dislocation concentrated regions. A distance between the laser optical waveguide region and the most approached dislocation concentrated region in a horizontal direction is 30μm or more. COPYRIGHT: (C)2004,JPO