| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which prevents gate current from flowing in a stationary conductive state and which avoids a withstand voltage drop of an element. SOLUTION: The silicon carbide semiconductor device includes grooves disposed and formed by facing the front layer of a drain region made of a first conductivity type silicon carbide semiconductor, an electric field relaxation layer having a different band gap from the silicon carbide semiconductor and made of a semiconductor layer for forming a hetero junction with the drain region, a gate region formed in the groove via the electric field relaxation layer and an insulating layer, and a source region formed on the front layer of the drain region pinched between the grooves. COPYRIGHT: (C)2004,JPO
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