| 摘要 |
PURPOSE: Provided are aluminum nitride-based ceramics, which have low volume resistivity at room temperature and low content of samarium. Also, provided are a member for producing semiconductors, and a method for manufacturing sintered product of aluminum nitride. CONSTITUTION: The aluminum nitride-based ceramics have a samarium content of 0.060 mol% or less as expressed in terms of samarium oxide, and comprise aluminum particles and a samarium-aluminum oxide phase, wherein the samarium-aluminum oxide phase has a length of 7 micrometers or more. The aluminum nitride-based ceramics have a volume resistivity of 1X10¬12 ohm.cm or less at room temperature. Additionally, the samarium-aluminum oxide phase comprises SmAl11O18. |
