SEMICONDUCTOR DEVICE WITH REDUCED CONTACT RESISTANCE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce a contact resistance between a shared contact plug and an active layer by burying a contact hole with a conductive material. CONSTITUTION: A conductive film is formed on a semiconductor substrate(1). The conductive film is patterned by using a photolithography technique and an etching technique. A first active layer(9a,9b) is formed by performing an impurity injection in the vicinity of the patterned conductive film on a surface of the semiconductor substrate. An interlayer insulating film(15) is formed on a surface of the semiconductor substrate. A contact hole is formed in the interlayer insulating film by using the photolithography technique and the etching technique. The contact hole exposes both of the first active layer and the conductive film. A second active layer(9c,9d) is formed by performing an impurity injection on a surface of the semiconductor substrate which is exposed in the contact hole.