| 摘要 |
PURPOSE:To microminiaturize a base width in a lateral pnp transistor by forming a polycrystalline semiconductor film for specifying the positions of an emitter and a collector on a semiconductor substrate between the emitter and the collector. CONSTITUTION:A polysilicon mask layer 14b is formed through a thin SiO2 film in the same step of forming a gate 13 of a MOSFET 50 on the surface of an Si base 11. Then, p-type diffused layers 15c, 15d are formed with the mask layer on the surface of the base through an SiO2 films as the emitter and the collector of a lateral pnp transistor. Thus, the base of the transistor 60 is formed in the same dimensional accuracy and fine width as the gate 13 of an MOSFET 50 formed on the same base. |
