| 摘要 |
PROBLEM TO BE SOLVED: To provide a small vapor phase growth device of a semiconductor film, which can uniformly supply raw material gas to a substrate without disturbing the gas flow, which does not need cleaning of a reaction tube, which can continuously grow a vapor phase, which can use a semiconductor except a nitride compound semiconductor, and which has less use gas quantity, and to provide a vapor gas growth method. SOLUTION: An opening part 112 is disposed on a substrate in a partition 111 dividing a lower raw material gas 109 guide/discharge and upper guide/discharge of gas 110 containing no raw material gas, which are arranged as substantially parallel on an internal substrate 102 of a reaction tube. A projection part 113 of gas 110 which does not contain a raw material is generated in the opening part 112 by controlling gas 110 containing no raw material gas. The projection part 113 adds lateral pressure to raw material gas 109 so as to grow the vapor phase. Thus, raw material gas can uniformly be supplied to the substrate, and the semiconductor except for the small nitride compound semiconductor without disturbance of the gas flow can be used. COPYRIGHT: (C)2004,JPO
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