发明名称 |
Process for semiconductor device fabrication in which an insulating layer is formed over a semiconductor substrate |
摘要 |
The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a substrate. The seed layer is formed by removing hydrogen from the substrate, depositing a seed layer precursor and exposing the precursor to excited atoms to form a seed layer on the substrate. In addition to serving as a template for the growth of a high K dielectric layer, the seed layer retards the undesirable oxidation of the silicon surface thereby improving the performance of active devices that include the insulating layer.
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申请公布号 |
US2004094809(A1) |
申请公布日期 |
2004.05.20 |
申请号 |
US20020300365 |
申请日期 |
2002.11.20 |
申请人 |
AGERE SYSTEMS, INC. |
发明人 |
FRANK MARTIN MICHAEL;CHABAL YVES;WILK GLEN DAVID |
分类号 |
H01L21/28;H01L21/316;H01L21/318;H01L21/8234;H01L29/51;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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