| 摘要 |
PROBLEM TO BE SOLVED: To form a high-capacity, highly-reliable MIM capacitor in a simple production method in a semiconductor device having a MIM capacitor. SOLUTION: In the semiconductor device, which has an interlayer dielectric 204 provided on a semiconductor substrate 101 and interconnections 208a, 208c that are embedded in the interlayer insulating film 204 and conducted with the semiconductor substrate 101, a MIM capacitor 201 has first and second electrodes 208b, 214b comprising a metal and a capacitive insulating film 210 comprising a dielectric, wherein the first electrode 208b is embedded in the interlayer dielectric 204, the capacitive insulating film 210 is provided on the first electrode 208b, and the second electrode 214b is a metal layer provided oppositely with the first electrode 208b through the capacitive insulating film 210. COPYRIGHT: (C)2004,JPO
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