发明名称 CMP FACILITY FOR SEMICONDUCTOR WAFER
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a CMP facility for a semiconductor wafer capable of preventing the slurry used in a polishing process of a semiconductor wafer from vapor-depositing onto the surface of each component part in the form of fume. <P>SOLUTION: A CMP facility for manufacturing a semiconductor element is provided with: a table 12 provided with a polishing pad 14, which rotates at a high speed; a slurry supply nozzle 16 which uniformly supplies the slurry to the surface of the polishing pad 14; a cleaning solution supply section which supplies the cleaning liquid for removing the slurry remaining on the polishing pad 14 and foreign matters; a head part 20 which makes a mounted wafer approach the polishing pad 14 and rotate at high speed; a conditioning part 24 which makes the conditioner 26 mounted approach the polishing pad 14 and rotate at high speed to flatten the surface of the polishing pad 14; and a control part which control part which controls the drive of each component part. The cleaning solution supply section supplies the cleaning liquid to each component section including the polishing pad 14 by spraying. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004146775(A) 申请公布日期 2004.05.20
申请号 JP20030130402 申请日期 2003.05.08
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 HONG YONG-SUNG
分类号 H01L21/304;B08B3/02;B24B57/02;H01L21/00;(IPC1-7):H01L21/304 主分类号 H01L21/304
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