| 摘要 |
PURPOSE: A polysilicon thin film transistor of a thin film transistor panel and a method for forming the polysilicon thin film transistor are provided to prevent electrostatic breakdown generated when ion doping is carried out. CONSTITUTION: N-type and P-type active layers are formed on a transparent insulating panel. The N-type active layers include the first and second N-type active layers(151a,151b) and the P-type active layers include the first and second P-type active layers(152a,152b). A gate insulating layer is formed on the N-type and P-type active layers and gate lines are formed on the gate insulating layer. The gate lines include the first gate line partially superposed on the first or second N-type active layer, the second gate line partially superposed on the first or second P-type active layer, and the third gate line partially superposed on the first and second N-type active layers and the first and second P-type active layers. The first and second gate lines respectively includes the first parts(121a,122a) superposed on the active layers, the second parts(121b,122b) that are not superposed on the active layers, and gate connectors(121c,122c) for connecting the first parts to the second parts. |
