| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element in which a transparent conductive oxide layer is formed on a light emitting layer constituted of a compound semiconductor and a current can be made to flow satisfactorily between the transparent conductive oxide layer and the light emitting layer. <P>SOLUTION: An Au film 7 is partially formed as a metal film on a light emitting layer section 9 constituted of a material expressed by (Al<SB>x</SB>Ga<SB>1-x</SB>)<SB>y</SB>In<SB>1-y</SB>P(wherein, 0<x≤1 and 0<y≤1). In addition, a GaAs contact layer 6 is interposed between the light emitting layer 9 and metal film 7. The contact layer 6 has smaller band gap energy than the light emitting layer 9 has, is in ohmic contact with the Au film 7, and contains no Al. In addition, an ITO film 8 is formed to cover the light emitting layer section 9 and Au film (metal film) 7 as the transparent conductive oxide layer. <P>COPYRIGHT: (C)2004,JPO |
