| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent the generation of a dishing phenomenon at a field region and secure device characteristics by using predetermined slurry. CONSTITUTION: A pad oxide and a nitride layer are sequentially formed on a silicon substrate. A field region is exposed by selectively etching the pad nitride and oxide layer. A trench is formed by etching the field region. An oxide layer is deposited on the resultant structure for filling the trench. A CMP(Chemical Mechanical Polishing) process is carried out on the oxide layer until the pad nitride layer is exposed. At this time, a predetermined agent is added for reducing polishing rate for the oxide layer and predetermined slurry having a pH concentration of 3, or less, is used.
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