发明名称 |
METHOD FOR FORMING MICRO PATTERN |
摘要 |
PURPOSE: A method for forming a micro pattern is provided to be capable of reducing mask error and improving field uniformity. CONSTITUTION: A mask substrate(100) made of quartz is prepared. A photoresist pattern is formed on the mask substrate. A plurality of trenches(101) are formed on the mask substrate by carrying out an etching process using the photoresist pattern as an etching mask. At this time, the trench has the first width. A trench type mask(120) is completed by forming a transmittancy controlling film(104) on the entire surface of the resultant structure. A micro pattern is formed on a wafer by carrying out an exposure process on the wafer using the trench type mask. The micro pattern has the second width. The second width is half as long as the first width.
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申请公布号 |
KR20040042426(A) |
申请公布日期 |
2004.05.20 |
申请号 |
KR20020070725 |
申请日期 |
2002.11.14 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HWANG, SEUNG MIN;KANG, CHUN SU |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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