| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device having a high precision polysilicon resistor. SOLUTION: For forming p source regions 23, 25 and p drain regions 24, 26, and for making polysilicon gates electrodes 27, 28 conductive, and further for forming a high accuracy polysilicon resistor 29, ion implantation 22 is performed for BF<SB>2</SB>with the dose of 1 to 5×10<SP>15</SP>cm<SP>-2</SP>with the acceleration energy of 50 to 100 keV. Hereby, the number of processes is reduced, and the high accuracy polysilicon resistor 29 with temperature variations of the value of resistance≤300ppm/°C can be obtained. COPYRIGHT: (C)2004,JPO
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