| 摘要 |
Semiconductor devices and methods of forming semiconductor devices are described. In one embodiment, a method comprises forming at least one conductive structure within a plurality of semiconductor substrates, said act of forming comprising first forming said at least one conductive structure to extend into a respective semiconductor substrate a distance that is less than an elevational thickness of the substrate, and second removing substrate material elevationally adjacent said one conductive structure effective to expose a surface of said one conductive structure, at least portions of one of the conductive structures having oppositely facing, exposed outer surfaces; and stacking individual substrates together such that individual conductive structures on each substrate are in electrical contact with the conductive structures on a next adjacent substrate. |
