| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CMP device for enhancing flatness of a substrate after polishing by bringing the polishing rate of an outer peripheral portion of the substrate to be polished closer to that of a center portion of the substrate to be polished. <P>SOLUTION: The CMP device 10 to chemically-mechanically polish a wafer 14 comprises a rotatable turntable 11, a polishing cloth 13 disposed on the turntable, a slurry feed mechanism to feed slurry on the polishing cloth, a polishing head 17 to press the wafer 14 against the polishing cloth 13 while holding the wafer 14, and a dresser 23 for an outer periphery of the polishing cloth to arrange a surface condition of the outer peripheral portion of the polishing cloth. <P>COPYRIGHT: (C)2004,JPO |
