SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING LEAKAGE CURRENT CAUSED BY OPENINGS OF LOWER ELECTRODE, AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve fidelity of the semiconductor device by preventing problems caused by openings of a lower electrode or a plug of a stacked capacitor. CONSTITUTION: A semiconductor device includes a capacitor, a lower electrode(11) of the capacitor having top and side surfaces as well as an opening on the top surface, an electric conductor or an insulator, a dielectric film(12), and an upper electrode(13). The electric conductor or an insulator is arranged at least in the vicinity of an entry in the opening and contains a material of the lower electrode as a portion of a composition. The dielectric film of the capacitor is arranged to face the top surface and the side surface of the lower electrode. The upper electrode of the capacitor is arranged to face the lower electrode through the dielectric film. The electric conductor or the insulator is provided on the upper surface of the lower electrode extended from inside the opening.