发明名称 Non-volatile programmable memory device
摘要 A memory cell includes a heating component that is connected to a voltage-breakdown component. The heating component is configured to accelerate the break-down of a voltage-breakdown component. Memory structures and methods for making them are also disclosed.
申请公布号 US6737686(B2) 申请公布日期 2004.05.18
申请号 US20020172304 申请日期 2002.06.13
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 FRICKE PETER;VANBROCKLIN ANDREW;JACKSON WARREN B.
分类号 G11C11/36;G11C11/38;G11C17/16;H01L27/12;(IPC1-7):H01L27/10 主分类号 G11C11/36
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