Using new pattern fracturing rules for optical proximity correction mask-making to improve critical dimension uniformity

摘要

This invention describes methods of using pattern fracture rules to form mask pattern segments and the mask for the mask pattern segments. The mask pattern segments have optical proximity correction and are separated into regular pattern elements and optical proximity correction elements. Regular fracture elements and special fracture elements are used. The special fracture elements are parallel to the regular fracture elements, perpendicular to the regular fracture elements, or both parallel to and perpendicular to the regular fracture elements. The special fracture elements are used to define the regular pattern elements and prevent the formation of resist residue in the completed mask. The optical proximity correction elements are formed using the regular fracture elements.