| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to obtain a crystalline silicon layer with high crystalline characteristics within a short time by using a wafer film containing desired metallic element. CONSTITUTION: A first insulating layer(12) containing silicon oxynitride is formed on a glass substrate(11). An amorphous semiconductor layer(13) containing silicon is formed on the first insulating layer. A wafer film(15) for promoting the amorphous semiconductor layer to be crystallized is formed thereon. The wafer film contains metallic elements such as Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au. The amorphous semiconductor layer is transformed into a crystalline semiconductor layer by using a heat treatment at 450 to 650 deg.C. An island-like semiconductor layer is formed by patterning the crystalline semiconductor layer.
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