发明名称 |
Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus |
摘要 |
An a-Si film is patterned into a linear shape (ribbon shape) or island shape on a glass substrate. The upper surface of the a-Si film or the lower surface of the glass substrate is irradiated and scanned with an energy beam output continuously along the time axis from a CW laser in a direction indicated by an arrow, thereby crystallizing the a-Si film. This implements a TFT in which the transistor characteristics of the TFT are made uniform at high level, and the mobility is high particularly in a peripheral circuit region to enable high-speed driving in applications to a system-on glass and the like.
|
申请公布号 |
US6737672(B2) |
申请公布日期 |
2004.05.18 |
申请号 |
US20010935090 |
申请日期 |
2001.08.22 |
申请人 |
FUJITSU LTD |
发明人 |
HARA AKITO;TAKEUCHI FUMIYO;YOSHINO KENICHI;SASAKI NOBUO |
分类号 |
G02F1/1345;G02F1/136;H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L31/037 |
主分类号 |
G02F1/1345 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|