| 发明名称 |
Method of manufacturing semiconductor device |
| 摘要 |
A method of manufacturing a semiconductor device according to an aspect of the present invention comprises forming a low dielectric constant insulating film having a siloxane bond as main skeleton on a semiconductor substrate, causing a surfactant to permeate the low dielectric constant insulating film, and conducting a predetermined step on the low dielectric constant insulating film permeated with the surfactant in a state adapted to be exposed to water.
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| 申请公布号 |
US6737363(B2) |
申请公布日期 |
2004.05.18 |
| 申请号 |
US20010961490 |
申请日期 |
2001.09.25 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MIYAJIMA HIDESHI;YAMADA NOBUHIDE;HAYASAKA NOBUO;KURASHIMA NOBUYUKI |
| 分类号 |
H01L21/31;H01L21/3105;H01L21/312;H01L21/316;H01L21/3205;H01L21/768;H01L23/522;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/31 |
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